Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated Diamond Wire Saw Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior 往复式电镀金刚石线锯切割单晶硅片特性研究基于磨损行为的单晶硅片化学机械抛光材料的去除特性
Both high material removal rate ( MRR) and smooth surface have to be achieved in primary chemical mechanical polishing ( CMP) of hard disk substrates. 硬盘盘基片粗抛光必须在较高材料去除率的基础上获得高表面质量。
Research on Contour Control Method of CNC Mechanical Polishing Machine for Aluminum Alloy Wheel Hub Surface 铝合金轮毂曲面CNC机械抛光轮廓控制方法研究
Material removal characteristic of silicon wafers in chemical mechanical polishing Study of the Technology on Removing Silica, Titanic and Ferric Oxide Impurities from Bauxite 单晶硅片化学机械抛光材料去除特性铝矾土除铁、硅、钛氧化物工艺的研究
Slurry flow weighs heavily on the performances of chemical mechanical polishing ( CMP) process, wherein the pad surface will alter the flow features considerably. 抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
Preparation of Ti or Zr-doped Ceria Abrasives and Their Chemical Mechanical Polishing Performance 钛锆掺杂CeO2磨料的制备及其化学机械抛光性能
Hydrodynamic Pressure Distribution Simulation for Chemical Mechanical Polishing by Three-dimensional Lattice Boltzmann Method 利用三维格子Boltzmann法研究化学机械抛光中压力分布
Study the application of pad in chemical mechanical polishing for sapphire wafer 抛光垫在蓝宝石衬底化学机械抛光中的应用研究
Application of chemical mechanical polishing on the finish machining 化学机械抛光技术及其在电子制造中的应用
Chemical Mechanical Polishing ( CMP); abrasive particle; modeling; wafer; 机械化学抛光;磨粒;建模;芯片;
Synthesis of CeO_2 Nanoparticles and its Chemical Mechanical Polishing Performance Preparation of Ti or Zr-doped Ceria Abrasives and Their Chemical Mechanical Polishing Performance 氧化铈纳米颗粒的合成及其化学机械抛光性能钛锆掺杂CeO2磨料的制备及其化学机械抛光性能
Development of SiO_2 ILD Chemical Mechanical Polishing Slurry and Its Performance Analysis 二氧化硅介质层CMP抛光液研制及其性能研究
Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior 基于磨损行为的单晶硅片化学机械抛光材料的去除特性
Study on the Material Adhesion Removal Mechanism in Chemical Mechanical Polishing of Silicon Wafers 芯片化学机械抛光过程中材料吸附去除机理的研究
Further, since such mechanical polishing is possible, the productivity can be increased by adopting sheet treatment. 此外,因为可以进行这样的进行抛光,通过采用片处理,可提高产率。
Study on Chemical Mechanical Polishing of LiNbO_3 Wafer by Taguchi Method 基于田口方法的铌酸锂基片CMP工艺研究
Effect of Polishing Load on Slurry Film Thickness in Chemical Mechanical Polishing CMP加工过程中加工载荷对液膜厚度的影响分析
Coupled Lattice Boltzmann Method and Discrete Element Method and Its Application in Chemical Mechanical Polishing 格子Boltzmann法和离散元法耦合算法及其在化学机械抛光中的应用
Effection of Surface Roughness on Fluid Performance in the Chemical Mechanical Polishing Process 表面粗糙度对化学机械抛光工艺过程流动性能的影响
PGL-B machine is suitable for Chinese traditional medicine granule, such as capsule and no or low sugar and tablet or coating of granule. Synthesis of CeO_2 Nanoparticles and its Chemical Mechanical Polishing Performance 型喷雾干燥制粒机适用于中成药制备冲剂、胶囊、片剂颗粒或对颗粒进行包衣。氧化铈纳米颗粒的合成及其化学机械抛光性能
Dynamic mechano-sorptive characteristics of larch timber during conventional drying process. Study on the Material Adhesion Removal Mechanism in Chemical Mechanical Polishing of Silicon Wafers 落叶松板材常规干燥过程的动态机械吸附特性芯片化学机械抛光过程中材料吸附去除机理的研究
Chemical mechanical polishing Rough surface Microscale flow Polishing slurry; 化学机械抛光;粗糙表面;微尺度流动;抛光液;
Research on Modeling Method of Material Removal Depth in CNC Mechanical Polishing for Aluminum Alloy Wheel 铝合金车轮CNC机械抛光材料去除深度建模方法研究
The smooth interior surface is achieved through mechanical polishing and generally followed by electropolishing, which removes the surface layer and its impurities. 平滑的内表面是通过取出表面层和杂质的机抛和在次之后再电抛得到的。
Influencing Factors of Conditioning Effect about Polishing Pad Conditioning for Chemical Mechanical Polishing 化学机械抛光用抛光垫的修整对修整效果的影响因素
An electrochemical mechanical polishing test and a micro-holes 'machining test was carried out. 结合相关项目的内容,用电源样机进行了电解机械复合抛光的工艺试验,试验结果验证了高频脉冲电源有利于提高加工的表面质量。
The Chemical mechanical polishing technique in the field of semiconductor industry was introduced. 介绍了半导体工业中蓬勃发展的化学机械抛光(CMP)技术。
This paper presents a method for processing single crystal diamond, which integrates mechanical lapping with chemical mechanical polishing. 本文提出采用机械研磨结合化学机械抛光的组合工艺加工单晶金刚石的方法。
Chemical Mechanical Polishing ( CMP) has been widely used in VLSI manufacturing. 化学机械抛光(CMP)已经被广泛的应用于大规模集成电路的制造中。
The study on silicon carbide chemical mechanical polishing technology is of importance for both theoretical guide and practical application. 研究碳化硅化学机械抛光技术中各因素对研磨去除率和研磨表面质量的影响具有重要的理论指导意义和实际应用价值。